As semiconductor device fabrication processes scale down to the few nanometer level, the short channel effect emerges as a significant obstacle in the integration of semiconductor devices. To address this issue, two-dimensional (2D) van der Waals quantum semiconductor materials such as MoS₂, WSe₂, MoTe₂, black phosphorus,… are being increasingly considered as alternative materials to traditional silicon-based materials. These 2D van der Waals semiconductors exhibits unique electrical and optical phenomena, holding potential for novel device applications. In particular, 2D semiconductor materials are known to reduce the short channel effect, enabling applications in sub-nanometer scale devices. Also, unlike three-dimensional silicon semiconductor devices, these 2D materials theoretically have no surface/interface defects and generally demonstrate high carrier mobility, making them promising future electronic materials that could complement the limitations of silicon. Their distinct electronic and optical properties also pave the way for the implementation of a wide range of devices applications beyond FETs, including Schottky diodes, PN diodes, CMOS inverters, and solar nanocells.
Our research focuses on fabricating these 2D semiconductor devices and studying their electronic properties using device scanning probe microscopy techniques. Along with the characterization of the device properties, we aim to fabricate advanced 2D semiconductor-based devices and develop next-generation semiconductor computational applications.